Scale to medium
Clas-SiC is unique in offering circa 4 week cycle times for Diode level SiC wafer processing to accelerate R & D and time to market for new device designs.
Mosfets & Switches are targeted at 8 weeks for R & D lots. Clas-SiC has invested in medium scale SiC production capacity to not only deliver time to market advantage but also time to profit as customer R & D is supported by over 200 man-years of Silicon Carbide processing expertise and a suite or library of “off the shelf” Process Module IP blocks to minimise technical risk and optimise R & D cycles to include design for manufacture principles from the outset.
Full 150mm tool set
For small volume rapid prototyping all the way to medium volume production Wafer fabrication, metrology, characterisation and test
|Stepper||i-line||Currently 0.8um; 0.5um capable|
|Wafertracks||SVG88 series||Photoresist, polyimide|
|Plasma etch||LAM 9400||SiC, polysilicon, etch|
|Plasma etch||LAM 4520||Oxide, nitride etch|
|Plasma etch||ET508||Oxygen plasma ash|
|Wet etch||Wet benches||Oxide, nitride, Al, Ti, TiW, Ni etches|
|Wet etch||Wet benches||Piranha, solvent resist strips|
|Wet processing||Acid processor||H2O2, H2SO4, NH4OH, HF, HCl|
|Films||STS 3290||Al, AlCu, Ti, TiW, Ni|
|Films||STS XM90||Ti, Ni, Ag|
|Films||PECVD||Silane based oxide, nitride; TEOS based oxide|
|Furnaces||Expertech||Thermal processing using N2, O2, H2O, N2O, NO|
|Furnaces||Expertech||LPCVD polysilicon, nitride, LTO (undoped, PSG, BPSG)|
|Implant anneal||Activator||Argon anneal up to 1750°C|
|RTP||Mattson 2800||Nitrogen, Argon, forming gas up to 1200°C|
|Test||Reedholm RI20||2kV/5A wafer probing|
|Test||Parameter analyser||3kV bench testing|
|Test||Automatic Probers||Automated wafer probing up to 2kV|
|Metrology||Particulate checks||Unpatterned wafer tool|
|Metrology||4 point probe||Mapping and manual probes|
|Dicing||Diamond saw||Wafer saw + wash|
|Laser scribe||Innolas IL1000||SiC laser scribing to assist traceability|
|Ion Implant||ULVAC PSiC||Al, N, P, B species; temperature room to 600°C; energies up to 1.2MeV||August 2019|
|Plasma Etch||TBD||Aluminium etch||September 2019|
Carl founded II-VI Incorporated (Saxonburg, Pennsylvania USA) in 1971 to develop and manufacture II-VI compound semiconductor materials for optics and electro-optical applications in the then emerging, high-power laser arena. He served the company as its Principal Executive Officer and a Director for 36 years and continued as its Board Chairman for an additional 7 years.
During his career at II-VI, Carl oversaw and participated in or helped motivate company efforts to:
JD Brookhart, a managing director at CJ&M Holdings, holds a finance degree from Colorado State University. He began his career as an award winning sales executive at Xerox and was recruited to advance his career in medical equipment sales and then engineering software sales. He made a life-changing decision and spent the next 18 years coaching football in the NFL and at the highest level of college. He was a coordinator and head coach at a number of prestigious schools. He now directs CJ&M Holdings and their pursuit of supporting start-up companies. JD also serves as a Board member for several for profit and non-profit entities. He lives in Denver, Colorado with his wife and 4 sons.
Steve has 20 years’ experience as a Director of venture capital backed technology businesses with a diverse range of markets and business models from Software As A Service (SaaS) & Licensing, through component and sub-system level product development, production & delivery in International markets. Steve has an Electronic Engineering & Embedded Software background, starting his career in Semiconductors before moving into development of products and systems in both Commercial and Defence Applications. During 16 years as a CEO, Steve has been successful in both raising venture capital and delivering an exit for shareholders via trade sale. Steve joined Raytheon Systems in 2013 as Business Lead of their Silicon Carbide Semiconductors business
Rae has 30 years’ experience in the Semiconductor industry working for Hughes Microelectronics and then Raytheon Systems. Rae has held advanced technology leadership roles in Process Engineering, Manufacturing & Operations. Rae is a qualified Raytheon 6δ Expert and has worked as a R6δ project manager leading many process & quality improvement projects. Rae’s experience, capability and effectiveness will provide a “Global Competitive” operational excellence model for Clas-Sic Wafer Fab Ltd.
David has a strong background in process engineering and process development, with more than 24 years of silicon process integration, device engineering, process development and yield engineering experience at Raytheon Systems. David moved into Silicon Carbide process integration and device engineering in 2004 and has experience across many SiC device technologies including Schottky diodes, PiN diodes, MOSFET’s, JFET’s, BJT’s, CLD’s and MESFET’s. During David’s tenure at Raytheon, he worked on a number of successful SiC process developments leading to successful manufacture of 1000’s of SiC device wafers.
David has a first class honours degree in Electrical and Electronic Engineering as well as a Post Graduate Certificate in Advanced Silicon Processing and Manufacturing Technologies. He has authored or co-authored more than 10 SiC processing papers, is joint inventor of one SiC related patent and has 3 other SiC related patent submissions pending. After leaving Raytheon Systems in 2017, David joined Clas-SiC as Principal Technologist, with oversight of Clas-SiC’s technology roadmap and technical direction.